-40%
10 x AI201K / 3I201K Russian Military Ga-As Oscillator Tunnel Diode, USSR
10 x AI201K / 3I201K Russian Military Ga-As Oscillator Tunnel Diode, USSR
10 x AI201K / 3I201K Russian Military Ga-As Oscillator Tunnel Diode, USSR
10 x AI201K / 3I201K Russian Military Ga-As Oscillator Tunnel Diode, USSR
10 x AI201K / 3I201K Russian Military Ga-As Oscillator Tunnel Diode, USSR

10 x AI201K / 3I201K Russian Military Ga-As Oscillator Tunnel Diode, USSR

$ 8.44

Availability: 100 in stock
  • Item must be returned within: 30 Days
  • Return shipping will be paid by: Buyer
  • Condition: nos, new, old stock
  • Country/Region of Manufacture: Russian Federation
  • Modified Item: No
  • Refund will be given as: Money Back
  • Non-Domestic Product: No
  • Brand: Unbranded/Generic
  • All returns accepted: Returns Accepted
  • Custom Bundle: No

    Description

    Russian Military Gallium- Arsenide Switching Alloyed Tunnel Diode
    AI201
    K / 3I201K,
    Rus name:
    АИ
    201K (3И201К)
    Diodes
    A
    I201K tunnel, GaAs, floatable, generator.
    Designed for use in high-frequency generators.
    Available in a sintered body with a pigtail.
    Metal-ceramic body
    New never used . New. Old Stock
    Lot of 10 pcs
    Parameters and characteristics diode
    AI201K /
    3I201K (
    АИ
    201K / 3И201К (rus name))
    :
    diode Weight no more than 0,1 g
    Material --------- Germanium (GE)
    Metal body -------ceramic body
    Electrical parameters
    AI201K / 3I201K
    :
    Peak current :
    • at 298 K (+25C) -
    90
    to 110 mA
    • at 358 K (+85C) -
    80
    to 110 mA
    • at 213 K (-60C)   -
    80
    to 12
    0
    mA
    The ratio of the peak current to the current trough, at least:
    • at 298 K (+25C) – 10, • at 373 K (+100C) – 6, • at 213 K (-60C)   - 10
    Peak voltage, not more than: - 0.33
    Resistance losses, no more than:
    at Iobr and = 100 mA –
    2,2
    Ohm
    The total diode capacitance at low current-voltage characteristics for f = 1 ÷ 10 MHz:
    -
    no more than 10 pF
    Case
    body
    housing capacity
    ,
    not more than - 0.8 pF
    Inductance Diode
    -
    no more than 1.3 nH
    Limit operational data
    :
    Constant forward voltage at:
    from 213K (-60C) to 358K (+85C) : - from 0,5….0,6V
    Ambient temperature:
    from 213K (-60C) to 358K (+85C)
    Remarks:
    1. When mounting devices on the jig may be cut tape conclusions without applying mechanical stress to the body of the device.
    2. Pressure on the instrument cover, perpendicular to the plane shall be not more than 15 N.
    3. It is not allowed to check diodes tester.
    4. Continuous operation of the diodes on the first ascending branch and the section of the negative resistance of the current-voltage characteristics.
    -------------------------------------------------------------------------------------------
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