3A129A Microwave GaAs Gunn Mixer diode 80GHz, Gold, USSR

Description

3A129A Microwave GaAs Gunn Mixer diode 80GHz,
Metal-Gold plated body
New old stock, NEVER USED, Made in USSR, RARE !
Lot of 1 pcs
Diodes 3A129A gallium arsenide, epitaxial, with a Schottky barrier, mixing.
Designed for use in frequency converters in the frequency range 80 ... 120 GHz.
Produced in a metal-ceramic tablet-type body.
The diode is good as mixer, detector or multiplier. Ideal for radio amateur applications.
* LOW NOISE FIGURE
* HIGH REPRODUCIBILITY OF I-V CHARACTERISTIC
* SCHOTTKY BARRIER AS AN ACTIVE ELEMENT
* HIGH RELIABILITY PROVIDED WITH DIODES PACKAGES AND CONSTRUCTION OF ACTIVE ELEMENT
* POSSIBILITY TO USE SOLDERING WHEN MOUNTING THE DIODES
* IDEAL CONVERTER FOR SUPERHETERODYNE MICROWAVE RECEIVERS, HIGH SENSITIVITY TO THE SIGNALS AT THE LEVEL OF RELICT COSMIC RADIATION
Characteristics diode 3A129A:
F - Working frequency 80-12 GHz
Conversion loss, type 4.8 dB
Conversion loss, no more than <6.5 dB
Normalized noise figure of the mixing diode <8.5 dB
Total average noise figure, no more than 7 dB
R Output impedance 180-700 ohms
K U Voltage standing wave ratio: <3
P - Maximum Continuous Power Dissipation, W: 7 mW
P - Maximum dissipation of pulsed microwave power, W: 25 mW
General current sensitivity, A / W 1.4
Output rectified current 0.3-2 mA
Forward DC voltage forward current 10 mA 0.9 V
Reverse voltage at reverse current 10 μA 6 V
T - Ambient operating temperature range: -60 .... + 85C.
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